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Micron - DDR5 DRAM - 16Gb
Micron - DDR5 DRAM - 16Gb
Micron DDR5 DRAM 16Gb: High-Speed Memory Innovation
Micron DDR5 DRAM 16Gb represents a significant leap in memory technology, engineered to meet the high-bandwidth demands of modern computing systems. With improved data rates, lower power consumption, and enhanced scalability, this next-generation DRAM is optimized for AI, cloud, and enterprise workloads. In this article, we’ll examine the architecture, benefits, and use cases that define Micron’s DDR5 innovation.
Micron DDR5 DRAM 16Gb – Technical Specifications
Specification |
Details |
Density |
16Gb (Gigabit) |
Data Rate |
Up to 6400 MT/s (initial), scalable to higher speeds in future revisions |
Voltage |
1.1V (core), lower than DDR4 (1.2V), with on-die voltage regulation (PMIC) |
I/O Bus |
64-bit per channel (dual 32-bit sub-channels per DIMM) |
Prefetch Architecture |
16n prefetch |
Bank Structure |
32 banks, organized into 8 bank groups |
Burst Length |
Burst length of 16 (BL16) |
ECC Support |
On-die ECC (Error Correction Code) for improved data integrity |
Command Bus |
2N Command/Address bus timing |
Package Type |
Standard BGA (Ball Grid Array) |
Target Applications |
Data centers, AI/ML workloads, HPC, enterprise servers, and desktops |
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